| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4459BDY-T1-GE3 is a P-Channel power MOSFET designed for applications requiring high power density. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 27.8A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 0.0049 Ohms at 10V Vgs and 4.5V drive voltage. The typical gate charge (Qg) is 27 nC, with a maximum of 84 nC at 10V Vgs. The input capacitance (Ciss) is a maximum of 3490 pF at 15V Vds.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC surface mount package, measuring 0.154 inches (3.90mm) in width. The device is suitable for various switching applications, including battery management, adapter and charger switches, and load switches.
Absolute maximum ratings include a continuous drain current of -27.8A at 25°C case temperature and -20.5A at 25°C ambient temperature. Power dissipation is rated at 5.6W (Tc=25°C) and 3.1W (Ta=25°C).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
4.9 mΩ.
84 nC maximum at VGS=10V; typical 27 nC.
3490 pF at VDS=15V.
MOSFET (Metal Oxide).