| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The SI4459ADY-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring a 30V drain-to-source voltage and can handle a continuous drain current of 29A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 5mOhm when tested at 15A drain current and 10V gate-source voltage. The device has a gate charge (Qg) of 195 nC maximum at 10V Vgs and an input capacitance (Ciss) of 6000 pF maximum at 15V Vds.
This MOSFET is housed in a surface-mount 8-SOIC package, making it suitable for various electronic designs. It operates with a drive voltage range of 4.5V to 10V and has a maximum gate-to-source voltage rating of ±20V. The power dissipation is rated at 3.5W at ambient temperature (Ta) and 7.8W at case temperature (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 29A.
The maximum Rds On is 5mOhm at 15A drain current and 10V gate-source voltage.
The part is supplied in an 8-SOIC package for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.