| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,982 pcs
|
6982 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,733 pcs
|
2733 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4459ADY-T1-GE3 is a P-Channel enhancement mode MOSFET from Vishay Dale, manufactured using advanced MOSFET technology. It is designed for high efficiency power switching applications. With a drain-to-source voltage rating of 30 V and a continuous drain current of 29 A at 25°C case temperature, this device delivers low on-resistance of 5 mOhm (maximum) at 15 A and 10 V gate drive. The gate threshold voltage is 2.5 V maximum at 250 µA drain current. The total gate charge is 195 nC at 10 V, and input capacitance is 6000 pF at 15 V Vds, indicating moderate switching speed capability.
The MOSFET is housed in an 8-SOIC surface mount package with a width of 3.90 mm. It supports a maximum power dissipation of 3.5 W at ambient temperature and 7.8 W at case temperature. The operating junction temperature range is -55°C to 150°C, suitable for automotive and industrial environments. This device is intended for applications such as DC-DC converters, load switching, and power management circuits where a P-Channel MOSFET is required for high-side switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 150°C.
5 mOhm maximum at 15A drain current and 10V gate voltage.
195 nC maximum at 10V gate voltage.
6000 pF maximum at 15V drain-source voltage.
29A at 25°C case temperature.