| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,889 pcs
|
200889 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4456DY-T1-E3 is a single N-Channel MOSFET designed for power switching applications. It offers a 40V drain-to-source voltage (Vdss) and can handle a continuous drain current of up to 33A under specific conditions.
The MOSFET exhibits a maximum on-resistance (Rds On) of 3.8mOhm when driven at 10V with a drain current of 20A. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.8V at 250µA and a maximum gate charge (Qg) of 122nC at 10V.
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this component is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 3.5W (Ta) or 7.8W (Tc).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as low confidence without verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
33A at Tc
3.8mOhm maximum at 20A and 10V
-55°C to 150°C (junction)
8-SOIC surface mount package
122nC maximum at 10V
5670pF maximum at 20V