RN1416,LFT
Toshiba
The Toshiba RN1416,LFT is an RF Diode. It features RoHS3 Compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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161 pcs
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161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale SI4456DY is an N-Channel Power MOSFET designed for applications such as secondary rectification and point-of-load power supplies. It features a 40V drain-source breakdown voltage and a low on-state resistance, with a typical Rds(on) of 0.0031 Ω at VGS = 10V and 20A, and 0.0037 Ω at VGS = 4.5V and 15A. The continuous drain current is rated up to 33A at TC = 25°C.
This MOSFET is built using TrenchFET Gen II technology and is 100% R_g and UIS tested. It comes in a SO-8 package suitable for surface mounting. The operating junction temperature range is -55°C to 150°C. The device is also halogen-free, adhering to IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (VDS) is 40V.
The typical Rds(on) is 0.0031 Ω at VGS = 10V and 20A, and 0.0037 Ω at VGS = 4.5V and 15A.
The continuous drain current (ID) is 33A at TC = 25°C.
The SI4456DY is available in the SO-8 package.
Yes, the SI4456DY is halogen-free according to IEC 61249-2-21.