| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
139,077 pcs
|
139077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,520 pcs
|
18520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4455DY-T1-GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay. It features a drain-source breakdown voltage of -150V and a continuous drain current of -2.8A at case temperature 25°C. The device is designed for high-voltage switching applications and offers low on-resistance.
The MOSFET is housed in an 8-SOIC surface-mount package with a width of 3.90mm. It supports surface mount assembly and is suitable for automated pick-and-place processes. The operating junction temperature range is -55°C to 150°C.
Electrical characteristics include a maximum on-resistance of 295 mOhm at VGS=10V and ID=4A, a typical gate charge of 42 nC at VGS=10V, and an input capacitance of 1190 pF at VDS=50V. The device has a maximum power dissipation of 5.9W at case temperature 25°C.
The SI4455DY-T1-GE3 is lead-free and halogen-free as per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150 V.
-2.8 A at case temperature 25°C.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C.
295 mOhm at VGS=10V and ID=4A.
4 V maximum at ID=250 µA.
5.9 W at case temperature 25°C.