| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92,718 pcs
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92718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,469 pcs
|
1469 pcs | On Request | 1 | On Request | On Request | 1231+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SI4455DY-T1-E3 is a P-Channel TrenchFET Power MOSFET designed for demanding applications. It offers a maximum drain-source voltage of 150V and a continuous drain current of 2.8A at 25°C case temperature.
Key electrical characteristics include a maximum Rds On of 295mOhm at 4A and 10V Vgs, and a gate charge of 42nC at 10V. The device operates within a junction temperature range of -55°C to 150°C.
This MOSFET is suitable for applications such as active clamp circuits in intermediate DC/DC power supplies and as an H-bridge high-side switch for lighting applications. It is housed in an 8-SOIC surface-mount package.
Thermal performance is supported by a maximum junction-to-ambient thermal resistance of 40°C/W and a junction-to-foot thermal resistance of 21°C/W. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -150 V (minimum) at VGS = 0 V, ID = -250 µA.
The MOSFET is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.
The continuous drain current is 2.8A at case temperature 25°C and 2A at ambient temperature 25°C.
The maximum on-resistance is 295 mOhm at ID = 4A, VGS = 10V.
The maximum gate threshold voltage is 4V at ID = 250 µA.
Maximum power dissipation is 5.9W at case temperature 25°C, 3.8W at 70°C, and 3.1W at ambient temperature 25°C.