| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4451DY-T1-E3 is a P-Channel MOSFET manufactured by Vishay Siliconix. It features a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 10A at 25°C. The on-resistance (Rds On) is a maximum of 8.25mOhm at 14A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 800mV at 850µA. The maximum gate-source voltage is ±8V, and the maximum power dissipation is 1.5W. This MOSFET operates within a temperature range of -55°C to 150°C.
It is available in a surface-mount 8-SOIC package. The drive voltage ranges from 1.8V to 4.5V. The gate charge (Qg) is a maximum of 120nC at 4.5V. This component is suitable for various electronic applications requiring efficient power switching.
Environmental compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 12V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current (Id) at 25°C is 10A.
The maximum on-resistance (Rds On) is 8.25mOhm at Id=14A and Vgs=4.5V.
The maximum gate threshold voltage (Vgs(th)) is 800mV at Id=850µA.