| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,236 pcs
|
3236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4451DY-T1-GE3 is a P-Channel MOSFET belonging to the TrenchFET® series. It features a drain-to-source voltage rating of 12V and supports a continuous drain current of 10A at 25°C (Ta). This MOSFET is suitable for low-voltage, high-current switching applications.
Key electrical parameters include a maximum on-resistance of 8.25mOhm at 14A and 4.5V, a gate threshold voltage of 800mV at 850µA, and a maximum gate charge of 120 nC at 4.5V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W (Ta).
Packaged in an 8-SOIC surface mount configuration, the SI4451DY-T1-GE3 is designed for ease of integration into various electronic designs. Its specifications make it a viable option for applications requiring efficient power switching in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 12V.
The continuous drain current (Id) is 10A at 25°C (Ta).
The maximum on-resistance (Rds On) is 8.25mOhm at 14A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C (TJ).
The package type is 8-SOIC.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.