| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,890 pcs
|
1890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
This Vishay Dale SI4451DY-T1-E3 is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 10A at ambient temperature. It offers a maximum on-resistance (Rds On) of 8.25mOhm when conducting 14A with a gate-source voltage (Vgs) of 4.5V. The gate charge (Qg) is a maximum of 120 nC at 4.5V Vgs, and the gate threshold voltage (Vgs(th)) is 800mV at 850µA.
Designed for surface mounting, this MOSFET comes in an 8-SOIC package with dimensions of 0.154 inches (3.90mm) width. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 1.5W at ambient temperature. The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
This component is suitable for various power switching applications where a P-Channel MOSFET is required. Its specifications make it a viable option for circuits needing efficient switching and moderate current handling capabilities within a standard surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V
8-SOIC (0.154", 3.90mm Width)
-55°C to 150°C (junction)
8.25mOhm maximum at 14A and 4.5V gate drive.
10A at ambient temperature.
800mV maximum at 850µA drain current.