SI4447DY-T1-GE3 The Vishay Dale SI4447DY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 3.3A. It features a low Rds On of 72mOhm at 4.5A and 15V.
Mfr Part #:

SI4447DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4447DY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 3.3A. It features a low Rds On of 72mOhm at 4.5A and 15V.
✓ Total Stock: 2,490 pcs
$ Price Range: $0.99

SI4447DY-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,490 pcs
2490 pcs On Request 1 On Request On Request 12+ On Request On Request

SI4447DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI4447DY-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI4447DY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 3.3A at a typical ambient temperature (Ta).

 

The MOSFET has a maximum on-resistance (Rds On) of 72mOhm when driven at 15V with a current of 4.5A. Its gate threshold voltage (Vgs(th)) is 2.2V at 250µA, and the maximum gate-to-source voltage (Vgs) is ±16V. The input capacitance (Ciss) is 805pF at 20V.

 

With a maximum power dissipation of 1.1W (Ta), this device operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology and is housed in a surface-mount 8-SOIC package, measuring 0.154" (3.90mm) in width.

 

The SI4447DY-T1-GE3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, making it suitable for a wide range of industrial and commercial designs.

SI4447DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4447DY-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI4447DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4447DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4447DY-T1-GE3 Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current of 3.3A.
  • Low Rds On of 72mOhm maximum.
  • Surface mount 8-SOIC package.
  • Wide operating temperature range.

SI4447DY-T1-GE3 Applications

  • Suitable for power switching applications.
  • Ideal for general-purpose MOSFET needs.
  • Used in low-voltage power supplies.
  • Applicable in battery management systems.

SI4447DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI4447DY-T1-GE3?

The drain-to-source voltage (Vdss) for the SI4447DY-T1-GE3 is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 3.3A.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 72mOhm at 4.5A and 15V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4447DY-T1-GE3 in?

It is in a surface mount 8-SOIC package.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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