| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,440 pcs
|
7440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4447ADY-T1-GE3 is a P-Channel MOSFET designed for applications requiring efficient switching. It features a maximum Drain-Source Voltage (Vds) of 40V and a continuous drain current (Id) of 7.2A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 45mOhm at 5A drain current and 10V gate-source voltage. The gate charge (Qg) is typically 11.8nC, and the input capacitance (Ciss) is 970pF.
The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an 8-SOIC surface mount package, suitable for various electronic designs.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage of ±20V. The maximum power dissipation is rated at 4.2W (Tc) at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The continuous drain current is 7.2A at 25°C case temperature.
The maximum Rds On is 45mOhm at 5A drain current and 10V gate-source voltage.
The device is supplied in an 8-SOIC package.
The operating junction and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.