| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
516,571 pcs
|
516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,717 pcs
|
5717 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4446DY-T1-E3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for low-voltage power switching applications requiring efficient performance in a compact surface-mount package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current of 3.9A at ambient temperature. The device achieves a low on-resistance of 40mOhm maximum at a gate-source voltage of 10V and drain current of 5.2A. Gate charge is 12nC at 4.5V, and input capacitance is 700pF at 20V drain-source voltage, enabling moderate switching speeds.
The MOSFET is offered in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 1.6V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±12V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 3.9A at ambient temperature.
The maximum on-resistance is 40mOhm at a gate-source voltage of 10V and drain current of 5.2A.
It comes in an 8-SOIC surface-mount package.
The operating junction temperature range is -55°C to 150°C.