| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,106 pcs
|
1106 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4438DY-T1-E3 is a single N-Channel MOSFET designed for various power applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 36A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.7mOhm when tested at 20A and 10V gate-source voltage. The gate charge (Qg) is 126 nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 2.6V maximum at 250µA. Input capacitance (Ciss) is 4645 pF maximum at 15V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package with a surface mount type, making it suitable for compact designs. The maximum power dissipation is rated at 3.5W (ambient) or 7.8W (case temperature).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 36A.
The Rds On (Max) is 2.7mOhm at 20A, 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is an 8-SOIC package designed for surface mounting.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1 Unlimited.