| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SI4435DYTRPBF is a P-Channel HEXFET Power MOSFET utilizing advanced processing techniques for high efficiency in battery and load management applications. It offers an ultra-low on-resistance of 0.02 Ohms at 8A and 10V gate-source voltage.
This surface-mount MOSFET has a drain-to-source breakdown voltage of -30V and a continuous drain current rating of 8A at 25°C ambient temperature. The operating temperature range is -55°C to +150°C (TJ). The device is housed in an 8-SOIC package, suitable for vapor phase, infrared, or wave soldering techniques.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 1V at 250µA. The MOSFET also includes an integral body diode with a forward voltage of -1.2V and reverse recovery characteristics specified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -30V minimum at VGS = 0V and ID = -250µA.
The SI4435DYTRPBF is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The junction and storage temperature range is -55°C to +150°C.
The maximum on-resistance is 0.020 Ohms at VGS = -10V, ID = -8A, and 0.035 Ohms at VGS = -4.5V, ID = -5A.
The maximum gate charge is 60nC at VGS = 10V.
The continuous drain current is -8A at TA = 25°C with VGS = -10V.