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SI4435DY The Vishay Siliconix SI4435DY is a P-Channel MOSFET designed for general-purpose switching applications. It features a 30V Drain-Source Voltage and a continuous drain current of -8A.
Mfr Part #:

SI4435DY

Available from 2 distributors
Mfr Name: Siliconix
Siliconix
The Vishay Siliconix SI4435DY is a P-Channel MOSFET designed for general-purpose switching applications. It features a 30V Drain-Source Voltage and a continuous drain current of -8A.
✓ Total Stock: 5,159 pcs
$ Price Range: $2.81

SI4435DY Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
2,690 pcs
On Request
2690 pcs On Request 1 On Request On Request 05+ On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
2,469 pcs
On Request
2469 pcs On Request 1 On Request On Request 9918/9748P/ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI4435DY Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SI4435DY Description

Short technical summary and product information.

The Vishay Siliconix SI4435DY is a P-Channel MOSFET housed in an SO-8 package. It offers a Drain-Source Voltage (VDS) of -30V and a continuous drain current (ID) of -8.0A at 25°C.

 

Key electrical characteristics include a low on-state resistance (rDS(on)) as low as 0.015 Ω at VGS = -10V and ID = -8.0A, and a typical gate threshold voltage (VGS(th)) of -2.0V. The device also features a maximum power dissipation of 2.5W at 25°C.

 

This MOSFET is suitable for various applications requiring efficient power switching. Its robust design and specified parameters make it a reliable component for electronic circuits. The operating junction and storage temperature range is -55°C to 150°C.

SI4435DY Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30-V (D-S) MOSFET
Subcategory: P-Channel

SI4435DY Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-Free Version is RoHS Compliant

SI4435DY Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4435DY Features

  • P-Channel MOSFET in SO-8 package.
  • 30V maximum Drain-Source Voltage.
  • -8A maximum Continuous Drain Current.
  • Low on-state resistance down to 0.015 Ω.
  • -55°C to 150°C operating temperature range.

SI4435DY Applications

  • Used in power management and load switching.
  • Suitable for battery protection circuits.
  • Ideal for DC-DC converter and inverter designs.
  • High-side load switch in portable devices.
  • Power distribution and polarity protection.

SI4435DY FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDS) of the SI4435DY?

The maximum drain-source voltage is -30 V.

What package does the SI4435DY come in?

The SI4435DY is available in an SO-8 surface-mount package.

What is the operating temperature range of the SI4435DY?

The operating junction and storage temperature range is -55 to 150 °C.

What is the drain-source on-resistance of the SI4435DY?

The drain-source on-resistance is 0.015 Ω to 0.020 Ω at VGS = -10 V, ID = -8.0 A, and 0.022 Ω to 0.035 Ω at VGS = -4.5 V, ID = -5.0 A.

What is the gate threshold voltage of the SI4435DY?

The gate threshold voltage (VGS(th)) is -1.0 V to -3.0 V (test condition: VDS = VGS, ID = -250 µA).

What is the maximum power dissipation of the SI4435DY?

The maximum power dissipation is 2.5 W at TA = 25°C and 1.6 W at TA = 70°C.

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