BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Siliconix SI4435DY is a P-Channel MOSFET with a Drain-Source Voltage rating of 30V. It offers a low Drain-Source On-State Resistance, with a maximum of 0.02 Ohms at VGS = -10V and ID = -8.0A.
This MOSFET is housed in a standard SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W at 25°C ambient temperature.
Key electrical characteristics include a Gate Threshold Voltage ranging from -1.0V to -3.0V and a continuous drain current of up to -8.0A at 25°C. The device is also noted as being lead (Pb)-free and RoHS compliant.
This component is well-suited for various switching and amplification applications in electronic circuits where a P-Channel MOSFET is required.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -30 V.
The continuous drain current is -8 A at 25°C ambient temperature when surface mounted on an FR4 board.
The maximum drain-source on-state resistance is 0.02 Ω at VGS = -10 V and ID = -8.0 A.
The operating junction and storage temperature range is -55 to 150 °C.
The SI4435DY is available in an SO-8 surface-mount package.
The gate threshold voltage ranges from -1.0 V to -3.0 V at VDS = VGS and ID = -250 µA.