| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,664 pcs
|
4664 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,602 pcs
|
1602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,254 pcs
|
1254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI4435DDY-T1-GE3 is a P-Channel power MOSFET designed for various applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 11.4A at 25°C case temperature.
This MOSFET offers a low on-resistance of 24mΩ at a gate-source voltage of 10V, making it efficient for switching applications. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 5W (Tc=25°C) or 2.5W (Ta=25°C).
Packaged in an 8-SOIC surface-mount case, the SI4435DDY-T1-GE3 is suitable for automated assembly processes. Its TrenchFET technology contributes to its performance characteristics. Key electrical parameters include a gate charge of 15nC typical and an input capacitance of 1350pF maximum.
Applications for this MOSFET include load switches and battery switches. It is available in lead-free and halogen-free configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V minimum at VGS = 0 V, ID = -250 μA.
11.4 A at Tc = 25 °C, 8.1 A at Ta = 25 °C.
24 mΩ maximum at VGS = -10 V, ID = -11.4 A; 35 mΩ maximum at VGS = -4.5 V, ID = -9.1 A.
3 V maximum at ID = -250 μA.
-55 °C to 150 °C (junction and storage).
8-SOIC (0.154", 3.90 mm Width) surface-mount package.
TrenchFET power MOSFET technology.