| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,520 pcs
|
18520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,729 pcs
|
1729 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
540 pcs
|
540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4435DDY-T1-E3 is a P-Channel TrenchFET power MOSFET designed for applications such as load switches and battery switches. It features a drain-source breakdown voltage of -30V and a continuous drain current of up to 11.4A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 24mOhm at 9.1A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The input capacitance is 1350pF at 15V, and the gate charge is 50nC at 10V.
This MOSFET operates within a junction temperature range of -55°C to +150°C. It has a maximum power dissipation of 2.5W at 25°C ambient temperature and 5W at 25°C case temperature. The device is housed in an 8-SOIC package suitable for surface mounting.
Vishay Dale offers this component with various compliance statuses, including RoHS3 compliance and Moisture Sensitivity Level 1. The operating temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30 V at VGS = 0 V and ID = -250 μA.
The maximum continuous drain current is -11.4 A at TC = 25 °C, -9.1 A at TC = 70 °C, -8.1 A at TA = 25 °C, and -6.5 A at TA = 70 °C.
The operating junction and storage temperature range is -55°C to +150°C.
The device is supplied in an 8-SOIC (SO-8) surface mount package.
The maximum on-resistance is 24 mOhm at VGS = 10 V and ID = 9.1 A.
The maximum gate threshold voltage is 3 V at ID = 250 μA.