SI4435BDY-T1-E3 The Vishay Dale SI4435BDY-T1-E3 is a P-Channel MOSFET designed for load and battery switching applications. It offers a 30V drain-source voltage and a continuous drain current of 7A.
Mfr Part #:

SI4435BDY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4435BDY-T1-E3 is a P-Channel MOSFET designed for load and battery switching applications. It offers a 30V drain-source voltage and a continuous drain current of 7A.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

SI4435BDY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

SI4435BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4435BDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4435BDY-T1-E3 is a P-Channel MOSFET featuring TrenchFET technology and an advanced high cell density process. It is rated for a drain-source voltage of 30V and a continuous drain current of up to 7A at 25°C ambient temperature. The MOSFET exhibits a low on-state resistance (Rds(on)) of 0.020 Ω at a gate-source voltage of -10V and a drain current of -9.1A.

 

This component is housed in a standard 8-SOIC package and is designed for surface mounting. It operates within a temperature range of -55°C to 150°C. The device is compliant with RoHS3 directives and is halogen-free, making it suitable for various electronic designs requiring reliable power switching.

 

Key electrical characteristics include a gate charge of 70 nC at 10V and a maximum power dissipation of 1.5W at 25°C. The gate threshold voltage is a maximum of 3V at 250µA. These specifications make the SI4435BDY-T1-E3 suitable for applications such as load switches and battery switches.

SI4435BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4435BDY-T1-E3 P-Channel 30V 7A 8-SOIC MOSFET
Subcategory: P-Channel

SI4435BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4435BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4435BDY-T1-E3 Features

  • P-Channel 30V MOSFET
  • Low Rds(on) of 0.020 Ohms
  • 7A continuous drain current
  • 8-SOIC surface mount package
  • Halogen-free and RoHS3 compliant

SI4435BDY-T1-E3 Applications

  • Ideal for load switching
  • Suitable for battery switches
  • Power management circuits
  • General purpose switching

SI4435BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4435BDY-T1-E3?

The drain-source voltage is 30V.

What is the continuous drain current of the SI4435BDY-T1-E3?

The continuous drain current is 7A at 25°C.

What is the Rds(on) of the SI4435BDY-T1-E3?

The Rds(on) is 0.020 Ohms at a gate-source voltage of -10V and a drain current of -9.1A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI4435BDY-T1-E3 available in?

It is available in an 8-SOIC package for surface mounting.

Is the SI4435BDY-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI4435BDY-T1-E3 halogen-free?

Yes, it is Halogen-free.

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