| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
335 pcs
|
335 pcs | On Request | 1 | On Request | On Request | 645 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Gate Charge | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The SI4435BDY-T1 from Vishay Siliconix is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of 7A at ambient temperature.
The MOSFET utilizes Metal Oxide Semiconductor technology and has a low on-resistance (Rds On) of 20mOhm at a drain current of 9.1A and gate-source voltage of 10V. The gate threshold voltage is typically 3V at 250µA, and the maximum gate-source voltage is ±20V. It has a gate charge of 70nC at 10V.
With a power dissipation rating of 1.5W at ambient temperature, this component operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, suitable for surface mounting.
The SI4435BDY-T1 is part of the TrenchFET® series, indicating its advanced trench technology for improved performance. Its specifications make it suitable for power management and switching applications where efficiency and reliability are crucial.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI4435BDY-T1 is 30V.
The continuous drain current (Id) for the SI4435BDY-T1 is 7A at ambient temperature.
The Rds On is a maximum of 20mOhm at a drain current of 9.1A and gate-source voltage of 10V.
The gate threshold voltage (Vgs(th)) is typically 3V at 250µA.
The maximum gate-source voltage (Vgs) is ±20V.
The operating temperature range is from -55°C to 150°C.
The SI4435BDY-T1 is supplied in an 8-SOIC package for surface mounting.