SI4434DY-T1-E3 The Vishay Dale SI4434DY-T1-E3 is an N-Channel MOSFET with a 250V drain-source voltage and 2.1A continuous drain current. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4434DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4434DY-T1-E3 is an N-Channel MOSFET with a 250V drain-source voltage and 2.1A continuous drain current. It is supplied in an 8-SOIC package.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

SI4434DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16

SI4434DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4434DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4434DY-T1-E3 is an N-Channel Power MOSFET designed for primary side switching applications. It features a high drain-source voltage rating of 250V and a continuous drain current of 2.1A at 25°C ambient temperature, with a maximum power dissipation of 1.56W.

 

This MOSFET operates within a temperature range of -55°C to 150°C. The package is an 8-SOIC, suitable for surface mounting. Key electrical characteristics include a gate threshold voltage of up to 4V and a low on-state resistance of 155mΩ at 3A and 10V gate-source voltage.

 

Applications for this component include telecom power supplies, distributed power architectures, and miniature power modules. It is also noted as being PWM-optimized and halogen-free.

 

The device is manufactured by Vishay Dale and comes in an 8-SOIC package designed for surface mounting.

SI4434DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 250V MOSFET
Subcategory: MOSFET

SI4434DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4434DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4434DY-T1-E3 Features

  • 250V drain-source voltage rating.
  • 2.1A continuous drain current.
  • Low Rds(on) of 155mΩ.
  • PWM-optimized TrenchFET technology.
  • Halogen-free according to IEC 61249-2-21.

SI4434DY-T1-E3 Applications

  • Primary side switch applications.
  • Telecom power supplies.
  • Distributed power architectures.
  • Miniature power modules.

SI4434DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4434DY-T1-E3?

The maximum drain-source voltage (Vds) is 250 V.

What is the continuous drain current at 25°C ambient temperature?

The continuous drain current is 2.1 A at 25°C ambient temperature.

What is the maximum power dissipation at 25°C ambient temperature?

The maximum power dissipation is 1.56 W at 25°C ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4434DY-T1-E3 supplied in?

The SI4434DY-T1-E3 is supplied in an 8-SOIC package.

Is the SI4434DY-T1-E3 RoHS compliant?

Yes, the SI4434DY-T1-E3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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