SI4431CDY-T1-GE3 The Vishay Dale SI4431CDY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 9A. It comes in an 8-SOIC package.
Mfr Part #:

SI4431CDY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4431CDY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 9A. It comes in an 8-SOIC package.
✓ Total Stock: 26,765 pcs
$ Price Range: $0.99

SI4431CDY-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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26,020 pcs
26020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
686 pcs
686 pcs On Request 1 On Request On Request 09+ On Request On Request
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59 pcs
59 pcs On Request 1 On Request On Request 23+ On Request On Request

SI4431CDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4431CDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4431CDY-T1-GE3 is a P-Channel MOSFET designed for load and battery switching applications. It features a TrenchFET power MOSFET construction and is 100% Rg tested.

 

Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 9A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 32mOhm at 7A and 10V gate-source voltage. The gate charge (Qg) is typically 13nC at 10V.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, suitable for surface mounting. The device offers a maximum power dissipation of 4.2W at 25°C case temperature and 2.5W at 25°C ambient temperature.

 

The SI4431CDY-T1-GE3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI4431CDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30V 9A 8SO MOSFET
Subcategory: P-Channel

SI4431CDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4431CDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4431CDY-T1-GE3 Features

  • P-Channel TrenchFET power MOSFET.
  • 30V drain-source voltage rating.
  • 9A continuous drain current.
  • Low 32mOhm Rds On.
  • Surface mount 8-SOIC package.

SI4431CDY-T1-GE3 Applications

  • Suitable for load switching.
  • Ideal for battery switching.
  • Used in power management circuits.

SI4431CDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4431CDY-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) is 32mOhm at 7A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI4431CDY-T1-GE3 in?

It is in an 8-SOIC (0.154", 3.90mm Width) package.

Is the SI4431CDY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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