| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,345 pcs
|
2345 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4431CDY-T1-E3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for medium-power switching applications. It offers a drain-source breakdown voltage of -30V and a continuous drain current of -9A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 32mOhm at VGS = -10V and 49mOhm at VGS = -4.5V. The device features a typical gate threshold voltage of -1.5V and a maximum gate charge of 38nC at VGS = 10V. Input capacitance is 1006pF maximum at VDS = 15V.
The MOSFET is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 4.2W at 25°C case temperature. Operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V (minimum at VGS = 0V, ID = -250 μA).
-9A at TC = 25°C, -7.2A at TC = 70°C, -7A at TA = 25°C, and -5.6A at TA = 70°C.
32mOhm maximum at VGS = -10V, ID = -7A; 49mOhm maximum at VGS = -4.5V, ID = -7A.
-55°C to 150°C.
8-SOIC (0.154", 3.90mm Width) surface-mount package.