SI4431BDY-T1-E3 The Vishay Dale SI4431BDY-T1-E3 is a P-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 5.7A.
Mfr Part #:

SI4431BDY-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4431BDY-T1-E3 is a P-Channel MOSFET designed for various applications. It features a 30V drain-source voltage and a continuous drain current of 5.7A.
✓ Total Stock: 129,789 pcs
$ Price Range: $0.99

SI4431BDY-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,100 pcs
8100 pcs On Request 1 On Request On Request 2010+ On Request On Request
Non-Authorised Inventory information
1,056 pcs
1056 pcs On Request 1 On Request On Request 06+ On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

SI4431BDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4431BDY-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI4431BDY-T1-E3 is a P-Channel MOSFET with a drain-source voltage rating of 30V. It offers a continuous drain current of 5.7A at 25°C ambient temperature and a maximum power dissipation of 1.5W. The MOSFET has a low on-state resistance of 30mOhm at a gate-source voltage of -10V and a drain current of -7.5A.

 

Designed for surface mounting, this component comes in an 8-SOIC package. The operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage of up to 3V at 250µA and a gate charge of 20nC at 5V.

 

The device operates with drive voltages of 4.5V and 10V. It is constructed using MOSFET technology. The P-Channel configuration makes it suitable for specific switching and amplification tasks in electronic circuits.

SI4431BDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 30V 5.7A MOSFET
Subcategory: P-Channel

SI4431BDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4431BDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4431BDY-T1-E3 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 5.7A.
  • Low Rds(on) of 30mOhm at 10V.
  • Surface mount 8-SOIC package.
  • Wide operating temperature range.

SI4431BDY-T1-E3 Applications

  • Suitable for power switching circuits.
  • Used in general electronic applications.
  • Ideal for low-voltage applications.
  • Component for battery management systems.

SI4431BDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI4431BDY-T1-E3?

The drain-source voltage is 30V.

What is the continuous drain current for the SI4431BDY-T1-E3?

The continuous drain current is 5.7A at 25°C.

What is the Rds On for the SI4431BDY-T1-E3?

The Rds On is a maximum of 30mOhm at 7.5A and 10V.

What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4431BDY-T1-E3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4431BDY-T1-E3 RoHS compliant?

The RoHS status is compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

Home
Account

Categories