| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,690 pcs
|
8690 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
610 pcs
|
610 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4430BDY-T1-E3 is an N-Channel TrenchFET Power MOSFET designed for efficient power switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 14A when mounted on a 1" x 1" FR4 board (Ta = 25°C).
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 4.5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 20A. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The device supports a gate-source voltage of up to ±20V.
Packaged in an 8-SOIC surface mount package, the SI4430BDY-T1-E3 operates within a junction temperature range of -55°C to 150°C. It is rated for a maximum power dissipation of 1.6W at 25°C ambient temperature. The datasheet indicates it is Halogen-free according to IEC 61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
14A at 25°C ambient, 20A at junction temperature 150°C.
4.5mOhm max at Vgs=10V, 6mOhm max at Vgs=4.5V.
-55°C to 150°C.
8-SOIC surface-mount package.
36nC at Vgs=4.5V.
3V max at 250µA.