SI4425DDY-T1-GE3 The Vishay Dale SI4425DDY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 19.7A continuous current. It is available in an 8-SOIC package.
Mfr Part #:

SI4425DDY-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4425DDY-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 19.7A continuous current. It is available in an 8-SOIC package.
✓ Total Stock: 34,984 pcs
$ Price Range: $0.99

SI4425DDY-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI4425DDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Transistor Type
Vgs (Max)
Vgs(th) (Max) @ Id

SI4425DDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4425DDY-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 19.7A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 9.8mOhm at 13A drain current and 10V gate-source voltage. The gate-source threshold voltage is a maximum of 2.5V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

The device is housed in an 8-SOIC package, suitable for surface mounting. Its technology is MOSFET (Metal Oxide), and it is part of the Si4 series. The maximum power dissipation is 5.7W at 25°C case temperature and 2.5W at 25°C ambient temperature.

 

Key electrical characteristics include a gate charge of 27nC typical and an input capacitance of 2610pF maximum. The device is lead (Pb)-free and halogen-free.

SI4425DDY-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si4
Canonical Name: Vishay Dale SI4425DDY-T1-GE3 P-Channel 30V MOSFET
Subcategory: P-Channel

SI4425DDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4425DDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4425DDY-T1-GE3 Features

  • P-Channel 30V MOSFET.
  • Continuous drain current 19.7A.
  • Low Rds On resistance 9.8mOhm.
  • Surface mount 8-SOIC package.
  • Lead (Pb)-free and halogen-free.

SI4425DDY-T1-GE3 Applications

  • Used in DC-DC buck converter power stages.
  • Ideal for motor driver high-side switches.
  • Suitable for battery protection circuit designs.
  • Applied in industrial load switching modules.

SI4425DDY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the continuous drain current?

The continuous drain current is 19.7A at 25°C case temperature.

What is the Rds On resistance?

The Rds On resistance is a maximum of 9.8mOhm at 13A drain current and 10V gate-source voltage.

What is the package type?

The package type is 8-SOIC.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is this product RoHS compliant?

Yes, it is RoHS3 Compliant.

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