| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
139,077 pcs
|
139077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4425BDY-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 8.8A at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 12mOhm when tested at 11.4A drain current and 10V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate-to-source voltage is ±20V. The operating temperature range is from -55°C to 150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) case, this component is designed for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching and power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
8.8A at ambient temperature.
12mOhm maximum at 11.4A and 10V gate drive.
3V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
8-SOIC surface mount package.
100nC maximum at 10V gate-source voltage.