| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,435 pcs
|
2435 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation |
The SI4420DY-E3 is an N-Channel MOSFET manufactured by On Semiconductor. This device features a minimum drain-to-source breakdown voltage of 30V and supports a maximum continuous drain current of 12.5A. The maximum on-resistance is 0.009Ω at Vgs = 10V, enabling efficient switching and low conduction losses.
Switching performance is characterized by a typical rise time of 10 ns and a typical fall time of 47 ns. Input capacitance is typically 2240pF at Vds = 15V. The device can dissipate up to 2.5W at ambient temperature.
The SI4420DY-E3 is offered in an SO-8 surface-mount package and supports an operating temperature range of -55°C to +150°C. It is RoHS3 compliant and unaffected by REACH.
The maximum continuous drain current is 12.5A.
The maximum drain-to-source on-resistance is 0.009Ω at Vgs = 10V.
The operating temperature range is -55°C to +150°C.
The device is housed in an SO-8 surface-mount package.