| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The SI4420DY from Siliconix is an N-Channel MOSFET designed for power applications. It features a drain-to-source voltage of 60V and a continuous drain current of 100A at 25°C. The MOSFET has a low on-resistance of 4.6 mOhm at 50A and 10V gate-source voltage, indicating efficient power handling.
This device is constructed using Metal Oxide Semiconductor technology. It has a maximum gate charge of 133 nC at 10V and a maximum gate-to-source voltage of ±20V. The input capacitance is rated at a maximum of 773 pF. The power dissipation is 1.5W when measured at the ambient temperature (Ta) and 156W at the case temperature (Tc).
The SI4420DY is housed in a Through Hole TO-220-3 package, suitable for various mounting configurations. Its robust specifications make it a reliable choice for demanding electronic circuits requiring high current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage (Vdss) for the SI4420DY is 60V.
The continuous drain current (Id) for the SI4420DY is 100A at 25°C.
The maximum Rds On for the SI4420DY is 4.6 mOhm, measured at 50A and 10V Gate-Source Voltage.
The gate charge (Qg) for the SI4420DY is 133 nC at 10V.
The input capacitance (Ciss) for the SI4420DY is 773 pF.
The SI4420DY is supplied in a TO-220-3 package.
The SI4420DY is designed for Through Hole mounting.