| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,667 pcs
|
150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4420BDY-T1-GE3 is an N-Channel MOSFET belonging to the Metal Oxide Semiconductor technology family. It is designed for surface mount applications and comes in an 8-SOIC package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9.5A at 25°C ambient temperature. The Rds On is specified at a maximum of 8.5mOhm when Id is 13.5A and Vgs is 10V. The gate charge (Qg) is 50nC at 10V Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA Id. The maximum gate-to-source voltage is ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its maximum power dissipation is 1.4W at 25°C ambient temperature. The part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
9.5A at 25°C ambient temperature.
8.5mOhm maximum at 13.5A drain current and 10V gate-source voltage.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
3V maximum at 250µA drain current.
50nC at 10V gate-source voltage.