| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
988 pcs
|
988 pcs | On Request | 1 | On Request | On Request | 940 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4420BDY-T1-E3 from Vishay Siliconix is an N-Channel MOSFET with a Metal Oxide technology. It is designed to handle a drain-to-source voltage (Vdss) of up to 30V and can sustain a continuous drain current (Id) of 9.5A at 25°C.
Key electrical characteristics include a maximum Rds On of 8.5 mOhm at 13.5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The maximum gate-source voltage is ±20V, and the gate charge (Qg) is 50nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.4W (Ta). It is housed in an 8-SOIC package and features surface mount technology.
The SI4420BDY-T1-E3 is suitable for applications requiring efficient switching and power handling capabilities within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width), surface mount.
-55°C to 150°C (junction).
9.5A at 25°C ambient.
8.5mΩ at 13.5A, 10V gate drive.
3V maximum at 250µA drain current.
50nC maximum at 10V gate voltage.