| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
776 pcs
|
776 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4416DY is a small signal N-Channel MOSFET manufactured by On Semiconductor. It is designed for various electronic applications requiring efficient switching and signal amplification.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 18mOhm at 9A drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is 1340 pF at 15V, and gate charge (Qg) is 20 nC at 5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It utilizes MOSFET (Metal Oxide) technology and comes in an 8-SOIC package suitable for surface mounting.
Additional specifications include a maximum power dissipation of 1W at ambient temperature. The product is described as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 12A.
The maximum on-resistance is 18mOhm at 9A and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
The SI4416DY is available in an 8-SOIC surface-mount package.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum gate charge is 20nC at 5V gate-source voltage.