| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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102 pcs
|
102 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The SI4412DY-T1-E3 is a single N-channel MOSFET manufactured by Vishay Siliconix. It is designed for various electronic applications requiring efficient power switching.
Key electrical characteristics include a breakdown voltage of 30V and a continuous drain current of 8.4A. The device exhibits a low on-state resistance of 0.019 Ohms, contributing to reduced power loss. It also features a gate-source breakdown voltage of ±20V and a threshold voltage of 1.9V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in an SO-8 package and is suitable for surface mount applications. The component is delivered on tape and reel for automated assembly processes.
30 V.
8.4 A.
0.019 Ω.
1.9 V.
SO-8 surface mount package.
-55°C to 150°C (junction temperature).
2.5 W.