| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750,000 pcs
|
750000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
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| SVHC Present | |
| Tape & Reel |
The SI4412DY-T1-E3 is a single N-channel MOSFET manufactured by Vishay Siliconix. It features a breakdown voltage of 30V and a continuous drain current of 8.4A.
Key electrical characteristics include a low drain-to-source on-resistance (Rds) of 0.019 Ohms and a gate-to-source breakdown voltage of ±20V. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is packaged in an SO-8 surface-mount case and is supplied on tape and reel. Its specifications make it suitable for various power management applications.
Additional parameters include a typical gate charge of 5.40 nC and an input capacitance of 560 pF at 15V Vds. The typical threshold voltage is 1.9V, with fast switching speeds indicated by rise and fall times of 5 ns and 3 ns respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (drain to source) for the SI4412DY-T1-E3 is 30V.
The continuous drain current (Ids) for the SI4412DY-T1-E3 is 8.40A.
The drain-to-source on-resistance (Rds) for the SI4412DY-T1-E3 is 0.019 Ohms.
The operating temperature range for the SI4412DY-T1-E3 is -55°C to 150°C.
The SI4412DY-T1-E3 is supplied in an SO-8 package.