| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,727 pcs
|
328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
102 pcs
|
102 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Tape & Reel |
The SI4412DY-T1-E3. from Vishay Dale is a single N-Channel MOSFET designed for various electronic applications. It offers a breakdown voltage of 30V and a continuous drain current of 8.4A. The device exhibits a low on-state resistance of 0.019 Ohms at a Vgs of 10V.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. It features a gate charge of 5.40 nC and an input capacitance of 560 pF at 15V Vds. The component is housed in a standard SO-8 package and utilizes a surface-mount style.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. The SI4412DY-T1-E3. is suitable for applications requiring efficient switching and low power loss.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Drain to Source) for the SI4412DY-T1-E3. is 30V.
The continuous drain current (Ids) is 8.40A.
The Drain to Source resistance (on) is 0.019 Ohms.
The operating temperature range is from -55°C to 150°C.
The SI4412DY-T1-E3. is supplied in an SO-8 package with a surface mount style.
The RoHS Status is RoHS3 Compliant.