| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
420,465 pcs
|
420465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4412ADY-T1-GE3 from Vishay Siliconix is a single N-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.8A at 25°C. The MOSFET has a low on-resistance (Rds On) of 24mOhm at 8A and 10V, and a gate charge (Qg) of 20nC at 10V.
This device operates within a temperature range of -55°C to 150°C (TJ) and is constructed using Metal Oxide Semiconductor technology. It is housed in an 8-SOIC package, suitable for surface mounting. The gate drive voltage requirements are 4.5V and 10V for maximum and minimum Rds On, respectively, with a maximum gate-source voltage (Vgs) of ±20V. The power dissipation is rated at 1.3W (Ta).
Compliance information indicates RoHS3 compliance, an MSL of 1 Unlimited, and REACH Unaffected status. The part is supplied in a Tape & Reel (TR) package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 5.8A at 25°C (Ta).
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in an 8-SOIC package, suitable for surface mounting.
Yes, it is RoHS3 compliant.