| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,362 pcs
|
1362 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4412ADY-T1-E3 from Vishay Dale is an N-Channel MOSFET featuring a 30V drain-to-source voltage (Vdss) and a continuous drain current of 5.8A at 25°C. It offers a low on-resistance of 24mOhm at 8A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is part of the TrenchFET® series. It operates within a temperature range of -55°C to 150°C (TJ).
The device is packaged in an 8-SOIC (0.154", 3.90mm Width) format, suitable for surface mounting. The maximum power dissipation is rated at 1.3W (Ta). The gate threshold voltage is a minimum of 1V at 250µA, and the maximum gate-source voltage is ±20V. The gate charge (Qg) is a maximum of 20nC at 10V gate-source voltage. The drive voltage ranges from 4.5V to 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 150°C (junction).
5.8A at 25°C ambient.
24mOhm maximum at Vgs=10V, Id=8A.
1V minimum at Id=250µA.
20nC at Vgs=10V.