| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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165 pcs
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165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-channel MOSFET, part number SI4410DY, is manufactured by ON Semiconductor. It is designed for surface mount applications and comes in an 8-SOIC package. Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 10A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 13.5mOhm at 10A and 10V gate-source voltage. The device operates within a temperature range of -55°C to 150°C (TJ).
With a gate charge (Qg) of 60 nC maximum at 10V and input capacitance (Ciss) of 1350 pF maximum at 15V, this MOSFET is suitable for various power switching applications. The maximum power dissipation is rated at 2.5W (Ta). The SI4410DY is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
Its robust specifications make it a reliable component for designs requiring efficient power control. The surface mount package simplifies integration into printed circuit boards, making it a practical choice for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
10 A at ambient temperature.
13.5 mOhm maximum at 10A drain current and 10V gate-source voltage.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
1 V maximum at 250µA drain current.