| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,800 pcs
|
11800 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4410BDY-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. This component is designed for general-purpose small signal applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.5A at a given temperature (Ta).
Key electrical characteristics include a maximum Rds On of 13.5mOhm at 10A and 10V, and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The gate-to-source voltage (Vgs) has a maximum rating of ±20V. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is supplied in an 8-SOIC package with a surface mount type. The maximum power dissipation is rated at 1.4W (Ta). The component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
7.5A at ambient temperature.
13.5mOhm maximum at 10A, 10V.
3V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
8-SOIC (0.154", 3.90mm width).
20nC at Vgs=5V.