| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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237 pcs
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237 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| FET Type | |
| Gate Charge | |
| Input Capacitance | |
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| Tape & Reel | |
| Technology |
The Vishay SI4410DY is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 10A at 25°C. The device exhibits a low on-resistance of 13.5 mOhm at 10A and 10V gate-source voltage, contributing to efficient power handling.
With a maximum power dissipation of 2.5W (Ta), the SI4410DY is suitable for applications requiring moderate power levels. Its operating temperature range spans from -55°C to 150°C, ensuring reliability in diverse environmental conditions. The MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is packaged in a standard 8-SOIC surface-mount configuration.
Key electrical characteristics include a gate threshold voltage of 1V at 250µA and a maximum gate-to-source voltage of ±20V. Input capacitance (Ciss) is rated at 1350pF at 15V, and gate charge (Qg) is 60nC at 10V. The drive voltage for achieving specified on-resistance is between 4.5V and 10V. This component is designed for surface mounting, requiring appropriate soldering techniques for optimal performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SI4410DY is 30V.
The continuous drain current (Id) at 25°C for the SI4410DY is 10A.
The maximum on-resistance (Rds On) for the SI4410DY at 10A and 10V is 13.5 mOhm.
The SI4410DY operates within a temperature range of -55°C to 150°C.
The SI4410DY is an N-Channel MOSFET.
The SI4410DY is supplied in an 8-SOIC package.
The SI4410DY is Lead free / RoHS Compliant.