| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
372 pcs
|
372 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4403DDY-T1-GE3 is a P-Channel power MOSFET featuring TrenchFET® Gen III technology. It offers a drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -15.4A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) as low as 0.0140 Ω at Vgs = -4.5V and a gate charge (Qg) of 39 nC typical. The device operates over a wide temperature range from -55°C to +150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, this MOSFET is suitable for applications such as adapter switches, load switches, DC/DC converters, high-speed switching, and power management in battery-operated, mobile, and wearable devices.
Its robust design and specifications make it a reliable choice for various power control and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is -20 V.
The maximum continuous drain current is -15.4 A at TC = 25 °C.
The Rds(on) is a maximum of 0.0140 Ω at VGS = -4.5 V.
The operating junction and storage temperature range is -55°C to +150°C.
It is available in an 8-SOIC package.