SI4403CDY-T1-GE3 The Vishay Dale SI4403CDY-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 13.4A. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4403CDY-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4403CDY-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 13.4A. It is supplied in an 8-SOIC package.
✓ Total Stock: 149,067 pcs
$ Price Range: $0.99

SI4403CDY-T1-GE3 Available from 4 distributors

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SI4403CDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI4403CDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4403CDY-T1-GE3 is a P-Channel MOSFET designed for various applications including adaptor switches and high current load switches. It features a maximum drain-source voltage of 20V and a continuous drain current of 13.4A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance (RDS(on)) of 15.5mOhm at 9A drain current and 4.5V gate-source voltage. The device operates with a gate-source voltage range of ±8V and has a gate charge of 90nC typical at 8V gate-source voltage.

 

This MOSFET is housed in an 8-SOIC package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is compliant with RoHS and Halogen-free standards.

 

Applications include adaptor switches, high current load switches, and notebook power management.

SI4403CDY-T1-GE3 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale SI4403CDY P-Channel 1.8 V (G-S) MOSFET
Subcategory: P-Channel

SI4403CDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4403CDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4403CDY-T1-GE3 Features

  • P-Channel 1.8 V (G-S) MOSFET.
  • 20V Drain-Source Voltage.
  • 13.4A Continuous Drain Current.
  • Low Rds(on) of 15.5mOhm.
  • 8-SOIC Surface Mount Package.

SI4403CDY-T1-GE3 Applications

  • Suitable for adaptor switch.
  • Designed for high current load switch.
  • Used in notebook applications.

SI4403CDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4403CDY-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current of the SI4403CDY-T1-GE3?

The continuous drain current is 13.4A at 25°C case temperature.

What is the typical Rds On for the SI4403CDY-T1-GE3?

The typical Rds On is 15.5mOhm at 9A drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4403CDY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package for surface mounting.

Is the SI4403CDY-T1-GE3 RoHS compliant?

Yes, the RoHS status is Compliant.

Does the SI4403CDY-T1-GE3 meet Halogen-free requirements?

Yes, it is Halogen-free.

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