| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4403BDY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage (Vds) of 20V and a continuous drain current of 7.3A at 25°C ambient temperature. The device exhibits a low on-state resistance (Rds(on)) of 17mOhm at a gate-source voltage of 4.5V and a drain current of 9.9A.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package, suitable for surface mounting. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 350µA, and the maximum gate-source voltage is ±8V. With a maximum power dissipation of 1.35W at 25°C, the SI4403BDY-T1-GE3 is engineered for reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 7.3A at 25°C ambient temperature.
The Rds On is a maximum of 17mOhm at 9.9A drain current and 4.5V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is in an 8-SOIC package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.