SI4401DY-T1-E3 The SI4401DY-T1-E3 is a P-Channel MOSFET from Vishay Dale with a 40V drain-source voltage and 8.7A continuous drain current. It features a low Rds On of 15.5mOhm at 10.5A and 10V Vgs.
Mfr Part #:

SI4401DY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The SI4401DY-T1-E3 is a P-Channel MOSFET from Vishay Dale with a 40V drain-source voltage and 8.7A continuous drain current. It features a low Rds On of 15.5mOhm at 10.5A and 10V Vgs.
✓ Total Stock: 1,024 pcs
$ Price Range: $0.99

SI4401DY-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
569 pcs
569 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
455 pcs
455 pcs On Request 1 On Request On Request On Request On Request On Request

SI4401DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4401DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4401DY-T1-E3 is a P-Channel MOSFET designed for various applications requiring efficient power switching. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 8.7A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 15.5mOhm when measured at 10.5A drain current and 10V gate-source voltage. The gate charge (Qg) is 50nC at 5V Vgs, and the gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is housed in a standard 8-SOIC package with surface mount technology. It is rated for a maximum power dissipation of 1.5W at ambient temperature. The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited.

SI4401DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI4401DY-T1-E3 P-Channel MOSFET
Subcategory: Single

SI4401DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4401DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4401DY-T1-E3 Features

  • P-Channel MOSFET with 40V drain-source voltage.
  • Continuous drain current of 8.7A.
  • Low Rds On of 15.5mOhm at 10.5A, 10V.
  • Surface mount 8-SOIC package.
  • RoHS3 Compliant status.

SI4401DY-T1-E3 Applications

  • Suitable for power switching applications.
  • Used in circuits requiring P-channel MOSFETs.
  • Efficient current handling capabilities.
  • Designed for surface mount assembly.

SI4401DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4401DY-T1-E3?

The drain-source voltage (Vdss) is 40V.

What is the continuous drain current of the SI4401DY-T1-E3?

The continuous drain current is 8.7A at ambient temperature.

What is the maximum on-resistance for this MOSFET?

The Rds On is a maximum of 15.5mOhm when measured at 10.5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI4401DY-T1-E3 in?

It is in an 8-SOIC package with surface mount type.

Is the SI4401DY-T1-E3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories