| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,375 pcs
|
2375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,252 pcs
|
2252 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,570 pcs
|
1570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,030 pcs
|
1030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,030 pcs
|
1030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
126 pcs
|
126 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4401DDY-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a drain-source breakdown voltage of 40V and a continuous drain current of up to 16.1A at 25°C case temperature. The MOSFET offers a low on-state resistance, with a maximum of 0.015 Ohm at 10.2A and 10V gate-source voltage.
This device is built using TrenchFET technology and operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 6.3W at 25°C case temperature and 2.5W at 25°C ambient temperature. The MOSFET is packaged in an 8-SOIC surface-mount package.
Key electrical characteristics include a gate charge of 33 nC typical and a gate-source threshold voltage of up to 2.5V. The input capacitance is rated at 3007 pF typical. The SI4401DDY-T1-GE3 is compliant with RoHS directives and is suitable for load switching and POL applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The continuous drain current is 16.1A at 25°C case temperature.
The maximum power dissipation is 6.3W at 25°C case temperature and 2.5W at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in an 8-SOIC package.