SI4401DDY-T1-GE3 The Vishay Dale SI4401DDY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source breakdown voltage and a continuous drain current of 16.1A. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4401DDY-T1-GE3

Available from 10 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4401DDY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source breakdown voltage and a continuous drain current of 16.1A. It is supplied in an 8-SOIC package.
✓ Total Stock: 138,636 pcs
$ Price Range: $0.99

SI4401DDY-T1-GE3 Available from 10 distributors

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SI4401DDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4401DDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4401DDY-T1-GE3 is a P-Channel MOSFET designed for various applications. It features a drain-source breakdown voltage of 40V and a continuous drain current of up to 16.1A at 25°C case temperature. The MOSFET offers a low on-state resistance, with a maximum of 0.015 Ohm at 10.2A and 10V gate-source voltage.

 

This device is built using TrenchFET technology and operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 6.3W at 25°C case temperature and 2.5W at 25°C ambient temperature. The MOSFET is packaged in an 8-SOIC surface-mount package.

 

Key electrical characteristics include a gate charge of 33 nC typical and a gate-source threshold voltage of up to 2.5V. The input capacitance is rated at 3007 pF typical. The SI4401DDY-T1-GE3 is compliant with RoHS directives and is suitable for load switching and POL applications.

SI4401DDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4401DDY-T1-GE3 P-Channel 40V MOSFET
Subcategory: P-Channel

SI4401DDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4401DDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4401DDY-T1-GE3 Features

  • P-Channel 40V MOSFET for power switching.
  • Continuous drain current of 16.1A at 25°C.
  • Low Rds(on) of 0.015 Ohm at 10.2A, 10V.
  • Operates from -55°C to 150°C.
  • Surface mount 8-SOIC package.

SI4401DDY-T1-GE3 Applications

  • Ideal for load switching applications.
  • Used in DC-DC converter circuits.
  • Suitable for battery protection systems.
  • Power management in portable devices.

SI4401DDY-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI4401DDY-T1-GE3?

The drain-source breakdown voltage is 40V.

What is the continuous drain current for the SI4401DDY-T1-GE3?

The continuous drain current is 16.1A at 25°C case temperature.

What is the maximum power dissipation of the SI4401DDY-T1-GE3?

The maximum power dissipation is 6.3W at 25°C case temperature and 2.5W at 25°C ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4401DDY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package.

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