SI4401BDY-T1-GE3 The Vishay Siliconix SI4401BDY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 8.7A continuous drain current. It is available in an 8-SOIC package.
Mfr Part #:

SI4401BDY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI4401BDY-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 8.7A continuous drain current. It is available in an 8-SOIC package.
✓ Total Stock: 81,000 pcs
$ Price Range: $0.99

SI4401BDY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
75,000 pcs
75000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

SI4401BDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4401BDY-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SI4401BDY-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 8.7A at 25°C ambient temperature. The device exhibits a low on-state resistance (Rds On) of 0.014 Ohms at a gate-source voltage (VGS) of -10V and a drain current of -10.5A.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC package, suitable for surface mounting. The device also offers a gate charge (Qg) of 55 nC at 5V VGS and a gate threshold voltage (Vgs(th)) of up to 3V at 250µA.

 

Key electrical characteristics include a maximum power dissipation of 1.5W at 25°C ambient temperature. The SI4401BDY-T1-GE3 is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.

SI4401BDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI4401BDY-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI4401BDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4401BDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4401BDY-T1-GE3 Features

  • P-Channel MOSFET with 40V VDS.
  • Continuous drain current up to 8.7A.
  • Low Rds On of 0.014 Ohms.
  • Surface mount 8-SOIC package.
  • RoHS3 compliant and Halogen-free.

SI4401BDY-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Used in general electronic designs.
  • Ideal for low-voltage applications.
  • Efficient current handling capability.

SI4401BDY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI4401BDY-T1-GE3?

The maximum drain-source voltage (VDS) for the SI4401BDY-T1-GE3 is 40V.

What is the continuous drain current of the SI4401BDY-T1-GE3?

The continuous drain current (ID) for the SI4401BDY-T1-GE3 is 8.7A at 25°C ambient temperature.

What is the Rds On for the SI4401BDY-T1-GE3?

The Rds On is a maximum of 0.014 Ohms at an ID of -10.5A and VGS of -10V.

What is the operating temperature range of the SI4401BDY-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4401BDY-T1-GE3 available in?

The SI4401BDY-T1-GE3 is available in an 8-SOIC package.

Is the SI4401BDY-T1-GE3 RoHS compliant?

Yes, the SI4401BDY-T1-GE3 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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