SI4390DY-T1-E3 The SI4390DY-T1-E3 is an N-Channel MOSFET from Vishay Dale with a 30V drain-source voltage rating. It is supplied in an 8-SOIC package and offers a continuous drain current of 8.5A.
Mfr Part #:

SI4390DY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The SI4390DY-T1-E3 is an N-Channel MOSFET from Vishay Dale with a 30V drain-source voltage rating. It is supplied in an 8-SOIC package and offers a continuous drain current of 8.5A.
✓ Total Stock: 33,266 pcs
$ Price Range: $0.99

SI4390DY-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,266 pcs
33266 pcs On Request 1 On Request On Request 14+ On Request On Request

SI4390DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4390DY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4390DY-T1-E3 is an N-Channel Power MOSFET designed for high-side DC/DC conversion applications. It features a 30V drain-source voltage (Vds) and a continuous drain current (Id) of 8.5A at 25°C ambient temperature.

 

This MOSFET utilizes TrenchFET technology, offering low gate charge (Qg) for efficient switching. Key electrical parameters include a maximum Rds(on) of 9.5mOhm at Vgs = 10V and Id = 12.5A, and a gate threshold voltage (Vgs(th)) of 2.8V maximum at 250µA. The operating temperature range is -55°C to 150°C (TJ).

 

Packaged in an 8-SOIC surface mount configuration, the SI4390DY-T1-E3 is suitable for space-constrained designs. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. This part is also noted as obsolete, making substitute parts necessary for new designs or long-term availability.

SI4390DY-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Siliconix Si4390DY N-Channel 30V Fast Switching MOSFET
Subcategory: Single MOSFET

SI4390DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI4390DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4390DY-T1-E3 Features

  • N-Channel 30V Power MOSFET
  • 8.5A continuous drain current
  • Low Rds(on) of 9.5mOhm
  • Fast switching with low Qg
  • 8-SOIC surface mount package

SI4390DY-T1-E3 Applications

  • High-side DC/DC conversion
  • Notebook power management
  • Server power supplies

SI4390DY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage rating is 30V.

What is the package type?

The part is housed in an 8-SOIC surface mount package (0.154", 3.90mm Width).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the continuous drain current?

At 25°C ambient, the continuous drain current is 8.5A; at 150°C junction temperature, it is 12.5A.

What is the on-resistance?

The maximum drain-source on-resistance is 9.5mOhm at VGS=10V and ID=12.5A; typical value is 7.5mOhm.

What is the gate threshold voltage?

The gate threshold voltage ranges from 0.8V (minimum) to 2.8V (maximum) at VDS=VGS, ID=250µA.

Is this part halogen-free?

Yes, the part is halogen-free.

Home
Account

Categories