| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI4386DY-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 7mOhm maximum at 16A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. The gate charge (Qg) is 18nC at 4.5V, and the gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
Operating within a temperature range of -55°C to 150°C (TJ), this device has a maximum power dissipation of 1.47W (Ta). It is packaged in an 8-SOIC (0.154", 3.90mm Width) case and features a surface mount type.
The SI4386DY-T1-E3 is specified with RoHS3 compliance, MSL 1 Unlimited moisture sensitivity, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
11A at ambient temperature.
8-SOIC surface mount package.
-55°C to 150°C (junction).
7mOhm max at 16A and 10V gate drive.
18nC at 4.5V gate-source voltage.