SI4384DY-T1-E3 The Vishay SI4384DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 10A. It features a low on-state resistance of 8.5mOhm at 10V gate-source voltage.
Mfr Part #:

SI4384DY-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SI4384DY-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 10A. It features a low on-state resistance of 8.5mOhm at 10V gate-source voltage.
✓ Total Stock: 228,654 pcs
$ Price Range: $0.99

SI4384DY-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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226,000 pcs
226000 pcs On Request 1 On Request On Request On Request On Request On Request
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2,500 pcs
2500 pcs On Request 1 On Request On Request 1031 On Request On Request
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154 pcs
154 pcs On Request 1 On Request On Request 11+ On Request On Request

SI4384DY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4384DY-T1-E3 Description

Short technical summary and product information.

The Vishay SI4384DY-T1-E3 is an N-Channel MOSFET designed for high-side DC/DC conversion applications in notebooks, desktops, and servers. It offers a drain-source voltage of 30V and a continuous drain current of 10A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum Rds(on) of 8.5mOhm at 15A and 10V Vgs, and a maximum gate threshold voltage of 3V at 250µA. The device also features a total gate charge of 18 nC at 4.5V Vgs.

 

This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is optimized for PWM applications and is available in lead-free and halogen-free options.

 

Applications include high-side DC/DC conversion in computing systems. The TrenchFET Gen II technology ensures reduced Qg and fast switching capabilities.

SI4384DY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si4384DY N-Channel MOSFET
Subcategory: N-Channel

SI4384DY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI4384DY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4384DY-T1-E3 Features

  • 30V drain-source voltage rating.
  • 10A continuous drain current.
  • Low 8.5mOhm Rds On.
  • Surface mount 8-SOIC package.
  • PWM optimized for efficiency.

SI4384DY-T1-E3 Applications

  • Ideal for DC/DC converters.
  • Suitable for notebook applications.
  • Used in desktop computers.
  • Applicable in server systems.

SI4384DY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI4384DY-T1-E3?

The drain-source voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 10 A at 25°C ambient temperature.

What is the Rds On (Max) at Vgs = 10V and Id = 15A?

The Rds On (Max) is 8.5 mOhm at 15A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI4384DY-T1-E3?

The package type is 8-SOIC (0.154", 3.90mm Width).

Is this MOSFET lead-free and halogen-free?

Yes, it is available in lead (Pb)-free and halogen-free options.

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